Uniformity的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列問答集和整理懶人包

Marcel Breuer: Shaping Architecture in the Post-War Era

為了解決Uniformity的問題，作者 這樣論述：

This book tracks the development of Marcel Breuer’s aesthetic clash between uniformity and singularity through the detailed examination of his seminal buildings. Each chapter examines a specific building and puts into context Breuer’s other work and the contemporary movements/architects of the po

st-war era such as Surrealism, Brutalism and structural expressionism. The buildings examined include the UNESCO Headquarters in Paris, France, of 1958; the IBM Research Center in Le Gaude, France, of 1962; the Annunciation Priory in Bismark, North Dakota, of 1963; and the Atlanta Central Library of

1980. Marcel Breuer’s approach to design was inspired by the Spanish phrase, sol y sombra (sun and shadow). Sun and shadow meant for Breuer that a juxtaposition of contrasts was necessary; light glass walls and heavy concrete, masses lifted over voids, and serial precast construction resting on scu

lptural columns became hallmarks of Breuer’s buildings. By creating an architecture of juxtaposition, Breuer’s work can be interpreted as a surrealist recontre, as fueling a new architectural condition. A critical evaluation of Marcel Breuer’s work, this book is written for graduate students, resear

chers, and academics interested in his work and how it shaped the architecture of the post-war era.

Uniformity進入發燒排行的影片

具有綠光雷射結晶多晶矽通道之T型閘薄膜電晶體射頻特性分析

為了解決Uniformity的問題，作者葉宇婕 這樣論述：

本論文中，我們研究具有T型閘極、空氣邊襯及矽化閘/源/汲極多晶矽薄膜電晶體的射頻特性。為了提升多晶矽薄膜的晶粒尺寸，我們使用綠光奈秒雷射來製備厚度為50 nm與100 nm的多晶矽薄膜。結果顯示厚度為100 nm的薄膜能得到等效尺寸大於1 μm的晶粒大小，遠優於50 nm厚的多晶矽薄膜。我們於元件製作時採用了新穎的T型閘極技術，不僅降低元件的閘極電阻，也使電晶體具有比微影技術解析極限更小的閘極線寬，使轉導得以大幅提升。我們也分別利用高溫的快速熱退火及低溫的微波退火來活化源汲極雜質。在通道厚度為100 nm並以快速熱退火進行源汲極活化的多晶矽薄膜電晶體中，對最小通道長度達124 nm之元件，截

止頻率可達59.7 GHz，最大震盪頻率亦可達34 GHz。具有相同通道厚度並以微波退火來活化雜質的電晶體中，當通道長度微縮至102 nm，元件的截止頻率更高達63.6 GHz，最大震盪頻率亦可達29.7 GHz。相較過往文獻報導的多晶矽薄膜元件，我們以微波活化源汲極的薄膜電晶體達到了最高的截止頻率。

North American Industry Classification System, 2022

為了解決Uniformity的問題，作者 這樣論述：

Published only once every five years, the North American Industry Classification System (NAICS) is an indispensable volume of official industry codes used by businesses, libraries, and other establishments and individuals to complete tax returns, grant requests, and fill out other forms and to im

prove analyses and comparisons of different industries. NAICS officially replaced the U.S. Standard Industrial Classification (SIC) system in 1997. It provides a consistent system of economic analysis across the three NAFTA nations--Canada, Mexico, and the United States. NAICS is used by U.S. statis

tical agencies to facilitate the collection, tabulation, presentation, and dissemination of data relating to establishments and to provide uniformity and comparability in the presentation of statistical data describing the U.S. economy. These statistics are used by all kinds of businesses, governmen

t agencies, policy analysts, academics and researchers, and the general public. NAICS is a comprehensive system covering all economic activities. The 2022 edition of NAICS supersedes the 2017 edition. The 2022 edition includes new and emerging industries, title changes, and clarification of industry

definitions. Revisions for 2022 were made to account for our rapidly changing economies.

應力對於側壁鑲嵌式閘極全環繞多晶矽電晶體結晶性及可靠度之影響

為了解決Uniformity的問題，作者陳威諺 這樣論述：

多晶矽因為其易堆疊性與低製程熱預算而被視為未來有機會實現三維晶片的材料，然而，多晶矽因結晶性較差而有較低的載子遷移率，進而影響其電性表現。為了使多晶矽元件能達到三維晶片電性需求，提升多晶矽結晶性成為實現三維晶片的重要的課題。在本篇論文中，我們成功製作出側壁鑲嵌式閘極全環繞多晶矽電晶體，並利用改變上層氮化矽厚度施加更大的應力於通道，藉此製作出結晶性更佳的電晶體。我們製作出上層氮化矽為 40 奈米、60 奈米及 80 奈米的多晶矽電晶體，並透過材料分析與電性比較來研究應力與結晶性的關係。研究發現，上層氮化物為 60 奈米之元件因其在結晶時感受到最大的應力，所以結晶速度最慢，最慢的結晶速度能成長出

最大的晶粒與最少的結晶缺陷。透過材料分析與電性量測，我們證實了上層氮化物為 60 奈米之元件有最好的結晶性與電性。此外，我們對不同上層氮化物厚度的側壁鑲嵌式閘極全環繞多晶矽電晶體的溫度穩定性、閘極偏壓可靠度與熱載子可靠度做了深入的研究。上層氮化物為 60 奈米之元件因其結晶性較佳所以有較好的通道與閘極氧化層介面，因此在高溫時有較少的次臨界擺幅衰退；也因其有較佳的結晶性與較少的晶界，晶界導致的電場加強效應較不明顯，因此展現出較佳的閘極偏壓可靠度與熱載子可靠度。此外，因為熱載子造成的碰撞解離相比於閘極偏壓時的主要衰退機制-氧化層電荷捕獲有更低的活化能，因此熱載子可靠度對結晶性有更高的敏感度。總結來

說，調變應力能大幅提升元件電性與可靠度，適合應用於未來三維晶片製程。