iot device的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列問答集和整理懶人包

A Practical Guide to Verilog-A: Mastering the Modeling Language for Analog Devices, Circuits and Systems

為了解決iot device的問題，作者Mijalkovic, Slobodan 這樣論述：

Discover how Verilog-A is particularly designed to describe behavior and connectivity of circuits and system components for analog SPICE-class simulators, or for continuous time (SPICE-based) kernels in Verilog-AMS simulators. With continuous updates since it’s release 30 years ago, this practica

l guide provides a comprehensive foundation and understanding to the modeling language in its most recent standard formulation. With the introduction of language extensions to support compact device modeling, the Verilog-A has become today de facto standard language in the electronics industry for c

oding compact models of active and passive semiconductor devices. You’ll gain an in depth look at how analog circuit simulators work, solving system equations, modeling of components from other physical domains, and modeling the same physical circuits and systems at various levels of detail and at d

ifferent levels of abstraction. All industry standard compact models released by Si2 Compact Model Coalition (CMC) as well as compact models of emerging nano-electronics devices released by New Era Electronic Devices and Systems (NEEDS) initiative are coded in Verilog-A. This book prepares you for t

he current trends in the neuromorphic computing, hardware customization for artificial intelligence applications as well as circuit design for internet of things (IOT) will only increase the need for analog simulation modeling and make Verilog-A even more important as a multi-domain component-orient

ed modeling language.Let A Practical Guide to Verilog-A be the initial step in learning the extended mixed-signal Verilog-AMS hardware description language.What You’ll LearnReview the hardware description and modeling language Verilog-A in its most recent standard formulation.Code new compact models

of active and passive semiconductor devices as well as new models for emerging circuit components from different physical disciplines.Extend the application of SPICE-like circuit simulators to non-electronics field (neuromorphic, thermal, mechanical, etc systems).Apply the initial steps towards the

extended mixed-signal Verilog-AMS hardware description language.Who This Book Is ForElectronic circuit designers and SPICE simulation model developers in academia and industry. Developers of electronic design automation (EDA) tools. Engineers, scientists and students of various disciplines using SP

ICE-like simulators for research and development.

iot device進入發燒排行的影片

應用於13.56MHz無線能量傳輸增益之超穎材料微型化設計與驗證

為了解決iot device的問題，作者許睿祐 這樣論述：

先前研究已開發出應用於植入式醫療器材無線充電效能增益之13.56MHz超穎材料(Metamaterial)，並證實此超穎材料能提升無線充電天線線圈在未對準或是距離太遠之能量傳輸效率。由於先前提出的超穎材料尺寸過大，無法成功應用於現實生活中的無線充電系統，例如：智慧型手機、無線滑鼠甚至是植入式醫療器材等。本研究論文則提出利用鎳鋅軟磁作為磁性材料增加超穎材料的電感值進而微縮其尺寸，將原先超穎材料邊長從8.5cm縮小至6.5cm並測試其對於天線線圈無線傳輸的效率增益性，由量測結果可發現，傳輸距離在2cm以上，當置入微型化之超穎材料後，天線能量傳輸效率將有提升，且當傳輸距離越大，增益效率會越大。當傳

輸距離到3.5cm時，傳輸效率甚至能從原先之4%上升至11%，有近乎3倍的效率增益；另外，在天線線圈有水平錯位或是傾斜角度時，傳輸效率也能因置入超穎材料而有更好的傳輸效率，且當未對準的情況越嚴重時，傳輸效率的增益會越大，因此本研究證實利用磁性材料可以有效微縮超穎材料，並能維持相同之傳輸效率增益的效果，研究成果將有助於未來應用於植入式醫療器材之無線充電系統。

Advanced VLSI Design and Testability Issues

為了解決iot device的問題，作者 這樣論述：

Suman Lata Tripathi is associated with Lovely Professional University, Phagwara, Punjab, as Professor with more than seventeen years of experience in academics. Her area of expertise includes microelectronics device modeling and characterization, low power VLSI circuit design, VLSI design of testing

and advance FET design for IOT and biomedical applications etc. Sobhit Saxena is an Associate Professor at Lovely Professional University University, Phagwara, Punjab. His area of expertise includes nanomaterial synthesis and characterization, electrochemical analysis and modeling and simulation of

CNT based interconnects for VLSI circuits. S. K. Mohapatra is working as Assistant Professor, in School of Electronics Engineering, Kalinga Institute of Industrial Technology, Bhubaneswar. His research interests include Modeling and Simulation of Nanoscale Devices and its application in IoT. Energy

efficient Wireless Sensor Networking, Adhoc Networks, Cellular Communications, Metamaterial absorbers in THz application, UWB-MIMO Antenna, Reconfigurable Antenna, Performance enhancement for high frequency.

具有綠光雷射結晶多晶矽通道之T型閘薄膜電晶體射頻特性分析

為了解決iot device的問題，作者葉宇婕 這樣論述：

本論文中，我們研究具有T型閘極、空氣邊襯及矽化閘/源/汲極多晶矽薄膜電晶體的射頻特性。為了提升多晶矽薄膜的晶粒尺寸，我們使用綠光奈秒雷射來製備厚度為50 nm與100 nm的多晶矽薄膜。結果顯示厚度為100 nm的薄膜能得到等效尺寸大於1 μm的晶粒大小，遠優於50 nm厚的多晶矽薄膜。我們於元件製作時採用了新穎的T型閘極技術，不僅降低元件的閘極電阻，也使電晶體具有比微影技術解析極限更小的閘極線寬，使轉導得以大幅提升。我們也分別利用高溫的快速熱退火及低溫的微波退火來活化源汲極雜質。在通道厚度為100 nm並以快速熱退火進行源汲極活化的多晶矽薄膜電晶體中，對最小通道長度達124 nm之元件，截

止頻率可達59.7 GHz，最大震盪頻率亦可達34 GHz。具有相同通道厚度並以微波退火來活化雜質的電晶體中，當通道長度微縮至102 nm，元件的截止頻率更高達63.6 GHz，最大震盪頻率亦可達29.7 GHz。相較過往文獻報導的多晶矽薄膜元件，我們以微波活化源汲極的薄膜電晶體達到了最高的截止頻率。